Fabrication and Experimental Setup for Neuromorphic Memory Devices: Performance Characterization of Neuron-Like Fibers

Abstract

To recreate the synaptic plasticity mechanisms of biological brain networks in artificial devices, the area of neuromorphic computing has become crucial. Creating memory devices based on polymers, such as Polyvinyl Acetate (PVAc), doped with metal ions to simulate long-term depression (LTD) and long-term potentiation (LTP), is one potential trend. The optimization of device performance to guarantee stability and dependability under extended load is still a challenge, despite notable developments.  By employing the use of I-V characterizations and pulse stress tests, this study assesses the ability of PVAc (+ metal ions) fiber devices to mimic neuromorphic memory functioning. Stress voltages of ±6V and ±15V were applied to the manufactured devices over 100 cycles, with a 10-second stress time and a 10-ms delay. Maximum current, current-voltage response and plasticity were examined. The findings show that the PVAc (+ metal ions) devices showed gradual increases in current under repeated cycles and notable synaptic-like plasticity over the first 300 seconds of stress application. Nevertheless, a saturation point was noted, which prevented more plasticity increase. The devices demonstrated strong performance over a range of voltages, but they also made clear the necessity for optimization to strike a compromise between neuromorphic imitation and device longevity. This study concludes by showing that PVAc (+ metal ions) has the potential to be a good option for neuromorphic memory applications, highlighting the significance of endurance optimization and operational restrictions in subsequent designs.